Semiconductor light-emitting device

ABSTRACT

A light-emitting diode has: a substrate; a light-emitting layer having a first conductivity type cladding layer, an active layer, and a second conductivity type cladding layer stacked sequentially on a front side of the substrate; a first current-blocking portion partially formed in the middle on the light-emitting layer; a current-conducting portion formed on the second conductivity type cladding layer and the first current-blocking portion; a lower electrode formed on the back side of the substrate, a light-reflecting layer formed between the substrate and the light-emitting layer; a partial electrode formed on the surface of the light-reflecting layer and in a portion positioned below the first current-blocking portion; and a second current-blocking portion formed over the surface of the light-reflecting layer excluding the portion in which is formed the partial electrode.

CROSS REFERENCE TO RELATED APPLICATIONS

This Application is a Divisional patent application of U.S. patentapplication Ser. No. 11/484,603 filed on Jul. 12, 2006, the entirecontents of which are incorporated herein by reference. This applicationclaims priority, makes reference to, incorporates the same herein, andclaims all benefits accruing under 35 U.S.C. §119 from Japanese patentapplication No. 2005-369243 filed in the Japanese Patent Office on Dec.22, 2005, the entire contents of which are incorporated herein byreference.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a light-emitting diode, andparticularly, to a light-emitting diode capable of conducting largeelectric current with high efficiency.

2. Description of the Related Art

In recent years, attempts have been positively made to applylight-emitting diodes to illumination because red to blue colors havebeen completed, and light-emitting efficiency of light-emitting diodescan finally be obtained to be equal to light-emitting efficiency ofbulbs.

On the other hand, the conducting current of utility light-emittingdiodes is generally 20 mA, but one light-emitting diode only serves as alight-emitting source on the order of a few tens of mW. To obtainbrightness of the order of a few tens of W as in bulbs, plurallight-emitting diodes are connected in parallel or series to each other,to obtain brightness needed. In traffic lights, for example, about 200light-emitting diodes arranged on the plane for one bulb are used as alamp. Accordingly, to widely use light-emitting diodes for illumination,it is required that light-emitting efficiency is higher, and thatconducting large current is possible, rather than that energyconsumption and cost are reduced.

Conventional light-emitting diodes are very easily affected by heat incomparison to conventional lamps such as bulbs, fluorescent lamps, etc.Heat caused during large electrical conduction through thelight-emitting diodes degrades light-emitting efficiency andreliability. To avoid this, there are methods for rapidly dissipatingheat caused to a stem, or for preventing generation of heat as much aspossible.

The method for rapidly dissipating heat caused is as follows: Flip-chipstructure is formed as in FIG. 9, which comprises a light-permeablesubstrate 109 having an extracting surface on its front side; alight-emitting layer having a p-type cladding layer 102, an active layer103, and an n-type cladding layer 104 on the back side of the substrate109; a packaging stem 107; an electrode 110 for the n-type claddinglayer 104; an electrode 111 for the p-type cladding layer 102; and apackaging alloy 112, wherein current is injected from the electrode 110for the n-type cladding layer 104 and the electrode 111 for the p-typecladding layer 102 bonded to the packaging stem 107 via the packagingalloy 112, and wherein the light-emitting layer that is aheat-generating portion is positioned as close to the packaging stem 107as possible. However, in this flip-chip structure, although heat causedin the light-emitting layer can be dissipated efficiently to thepackaging stem 107, there is the problem with thermal resistance betweenthe heat-generating light-emitting layer and the heat-dissipatingsubstrate.

Accordingly, as shown in FIG. 10, a light-emitting layer comprising ann-type cladding layer 104, an active layer 103, and a p-type claddinglayer 102 is first grown over a high thermal-resistive substrate (notshown), and laminated with a low-thermal-resistivehigh-thermal-conductive substrate 113 via a semiconductor bonding layer114, followed by removal of the high thermal-resistive substrate, andsubsequent formation of upper and lower electrodes 101 and 106. A Sisubstrate is most widely used as the high-thermal-conductive substrate113 used in FIG. 10. Also used is a substrate which uses CuW, etc. froma linear expansion coefficient relationship.

On the other hand, to prevent generation of heat as much as possible,light-emitting efficiency of light-emitting diodes has to be made high,and electrical energy converted into light as much as possible forextraction, so as not to be converted into heat. In other words, it isrequired that internal quantum efficiency for efficiently recombiningelectrons and holes injected is made as high as possible, and further,that light-extracting efficiency for extracting light emitted fromlight-emitting diodes is made high.

In the light-emitting diode of FIG. 10, however, of light emitted fromthe light-emitting layer to the front surface, a portion of the light isreleased to outside of the light-emitting diode, but from a differencebetween the refractive index of the surface of the light-emitting diodeand the refractive index of the outside of the light-emitting diode,most of the light is reflected at the surface of the light-emittingdiode, so that light passed towards the high-thermal-conductivesubstrate 113 reaches the bonding layer 114 at the interface of thelight-emitting layer and the high-thermal-conductive substrate 113,where some of the light is reflected and the other is absorbed. If thelight reflectance at the bonding layer 114 is high, light reflected ispassed to the front surface, and a portion of the light is released tothe outside of the device, while the remaining light is again reflected.Light can be extracted by repeating such reflection. However, because itis also required that the bonding layer 114 conducts electricity, itsreflectance cannot be made very high. In other words, there is atradeoff between light reflectance and electrical conductance.

To circumvent this, as shown in FIG. 11, there is the method ofseparately forming the current-conducting partial electrode 115 and thelight-reflecting bonding layer 114 in the light-emitting diode of FIG.10 (See JP-A-2001-144322, for example). Further, directly below thelight-impermeable upper electrode 101 is formed a current-blockingportion 116, to spread current to the periphery of the upper electrode101 and thereby prevent light from being emitted directly below theupper electrode 101, to enhance light-emitting efficiency.

In the structure of FIG. 11, however, while the driving voltage can becontrolled to be low by increasing the current-conducting area of thepartial electrode 115, because the area of the bonding layer 114 isdecreased, there is the problem of a decrease in reflectance andtherefore in light-emitting efficiency. In other words, in the structureof FIG. 11, there is difficulty in balancing the tradeoff between highreflectance and low electrical resistance.

SUMMARY OF THE INVENTION

Accordingly, it is an object of the present invention to provide alight-emitting diode, which is capable of obviating the above problem,and of conducting large electric current with high light-emittingefficiency.

(1) According to one aspect of the invention, a light-emitting diodecomprises:

a substrate;

a light-emitting layer comprising at least a first conductivity typecladding layer, an active layer, and a second conductivity type claddinglayer stacked sequentially on a front side of the substrate;

a first current-blocking portion partially formed in the middle on thelight-emitting layer;

a current-conducting portion formed on the second conductivity typecladding layer and the first current-blocking portion;

a lower electrode formed on the back side of the substrate,

a light-reflecting layer formed between the substrate and thelight-emitting layer;

a partial electrode formed on the surface of the light-reflecting layerand in a portion positioned below the first current-blocking portion;and

a second current-blocking portion formed over the surface of thelight-reflecting layer excluding the portion in which is formed thepartial electrode.

(2) According to another aspect of the invention, a light-emitting diodecomprises:

a substrate having a light-extracting portion on its front side;

a light-emitting layer comprising at least a first conductivity typecladding layer, an active layer, and a second conductivity type claddinglayer stacked sequentially on the back side of the substrate;

a current-blocking portion formed in a side portion on the back side ofthe second conductivity type cladding layer;

a current-spreading layer formed on the back side of thecurrent-blocking portion and the second conductivity type claddinglayer;

a current-injecting electrode formed on the back side of thecurrent-spreading layer so as to face the current-blocking portion; and

a light-reflecting layer formed on the back side of thecurrent-spreading layer excluding the portion in which is formed thecurrent-injecting electrode.

In the above invention (1) or (2), the following modifications andchanges can be made.

(i) The sheet resistance of the second conductivity type cladding layeris higher than that of the first conductivity type cladding layer.(ii) The light-reflecting layer comprises a layer formed of an alloycontaining any or at least one of Ag, Au, and Al, or a composite layerthereof.(iii) The active layer has multi-quantum-well structure.

In the above invention (1), the following modifications and changes canbe made.

(iv) The current-conducting portion comprises a current-spreading layerprovided over the first current-blocking portion and the secondconductivity type cladding layer, and an upper electrode provided on thecurrent-spreading layer.(v) The current-conducting portion comprises a branching electrodeprovided to come into contact with the surface of the firstcurrent-blocking portion and the second conductivity type claddinglayer.(vi) The current-conducting portion comprises a branching electrodeprovided so as to come into contact with the surface of the firstcurrent-blocking portion and the second conductivity type claddinglayer, and a current-spreading layer provided on the second conductivitytype cladding layer so as to expose a portion of the surface of thebranching electrode.(vii) The current-conducting portion comprises a branching electrodeprovided so as to come into contact with the surface of the firstcurrent-blocking portion and the second conductivity type claddinglayer, a current-spreading layer provided over the second conductivitytype cladding layer and the branching electrode, and an upper electrodeprovided on the current-spreading layer.

In the above invention (2), the following modifications and changes canbe made.

(viii) The current-spreading layer comprises a transparent conductivefilm.

ADVANTAGES OF THE INVENTION

The light-emitting diode according to the present invention is capableof stably attaining high optical output, while controlling drivingvoltage to be low even in the case of large electrical conduction.

BRIEF DESCRIPTION OF THE DRAWINGS

The preferred embodiments according to the invention will be explainedbelow referring to the drawings, wherein:

FIG. 1 is a cross-sectional view of an AlGaInP light-emitting diodeaccording to a first embodiment of the present invention;

FIGS. 2A-2D are respectively diagrams showing a process for making theAlGaInP light-emitting diode in FIG. 1;

FIG. 3 is a diagram showing current flow through the AlGaInPlight-emitting diode in FIG. 1;

FIG. 4 is a cross-sectional view of an AlGaInP light-emitting diodeaccording to a second embodiment of the present invention;

FIG. 5 is a cross-sectional view of an AlGaInP light-emitting diodeaccording to a third embodiment of the present invention;

FIGS. 6A-6D are respectively cross-sectional views cut along a line A-Ain FIG. 5;

FIG. 7 is a cross-sectional view of an AlGaInP light-emitting diodeaccording to a fourth embodiment of the present invention;

FIG. 8 is a cross-sectional view of an AlGaInP light-emitting diodeaccording to a fifth embodiment of the present invention;

FIG. 9 is a cross-sectional view of a conventional light-emitting diode;

FIG. 10 is a cross-sectional view of a conventional light-emittingdiode; and

FIG. 11 is a cross-sectional view of a conventional light-emittingdiode.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS First Embodiment

FIG. 1 shows a cross-sectional structure of an AlGaInP light-emittingdiode according to a first embodiment of the present invention. Thelight-emitting diode device is 1 mm×1 mm sized and 250 μm thick.Procedures for making the light-emitting diode of FIG. 1 will beexplained below by reference to FIGS. 2A-2D.

First, as shown in FIG. 2A, by using MOCVD method, on an n-type GaAssubstrate 1, an n-type AlGaInP cladding layer (hereinafter, n-typecladding layer) 2, an active layer 3, and a p-type AlGaInP claddinglayer (hereinafter, p-type cladding layer) 4 are sequentially stacked.Here, the sheet resistance of the n-type cladding layer 2 is made higherthan the sheet resistance of the p-type cladding layer 4. By using CVDmethod, over the entire surface of the p-type cladding layer 4, acurrent-blocking portion 5 made of SiO₂ is formed. Subsequently,photolithography is used to cut, in the current-blocking portion 5, 120μm-diameter holes spaced at an interval of 1050 μm in a matrix form, toexpose the p-type cladding layer 4. Next, by using photolithography anddeposition, in exposed portions of this p-type cladding layer 4, a filmmade of AuBe and Ni_is stacked and formed, followed by annealing to forma partial electrode 6. Further, over the layer comprising thecurrent-blocking portion 5 and the partial electrode 6, alight-reflecting layer 7 made of an Ag alloy (marketed as APC, FURUYAMETAL Co., Ltd.), a diffusion-inhibiting layer 8 made of Ti, and abonding layer 9 a made of Au or AuSn are deposited and formed.

As shown in FIG. 2B, on the other hand, on the front side of a highthermal-conductivity substrate 10 made of Si, an electrode 11 for thehigh thermal-conductivity substrate 10 is_deposited, while on the backside of the high thermal-conductivity substrate 10, a lower electrode 13made of Al is deposited. Then, on the electrode 11 for the highthermal-conductivity substrate, a diffusion-inhibiting layer 12 made ofTi and a bonding layer 9 b made of Au or AuSn are sequentially depositedand formed.

The above two wafers made are set in a bonding apparatus. This apparatusis available in the market for SOI substrate manufacture andmicromachines. The high thermal-conductivity substrate 10 is set in alower wafer holder of the bonding apparatus so that the bonding layer 9b is on the upper side. Also, the GaAs substrate 1 side wafer is set inan upper wafer holder of the bonding apparatus so that the bonding layer9 a is on the lower side. These two wafer setting is followed byevacuation of the bonding apparatus. After the evacuation, therespective bonding layers 9 a and 9 b of the two wafers are brought intocontact with each other, and directly pressurized to form together abonding layer 9. In this case, pressure is sufficient which brings therespective entire surfaces of the warped wafers into contact with eachother but which does not have to bond the two wafers together. Withthese two wafers set in the wafer holders respectively, current isconducted through a heater, to heat them up to 350° C. while controllingthe temperature thereof. This is held for one hour, and thereaftercooling thereof is started. When the temperature of the wafers isdecreased below 50° C., air is introduced into the vacuum container andthe lid of the bonding apparatus is opened to take out the bonded wafer.

This bonded wafer is mounted to a grinding jig so that its GaAssubstrate 1 is on the upper side, to grind and remove a portion of theGaAs substrate 1, to detach the wafer from the grinding jig.Subsequently, the remaining portion of the GaAs substrate 1 is etchedand removed to cause the n-type cladding layer 2 to appear from thesurface of the wafer. During the etching, the lower electrode 13 on thebackside is protected from being melted (FIG. 2C).

As shown in FIG. 2D, on the n-type cladding layer 2 of this bondedwafer, a current-blocking portion 14 made of SiO₂ is formed. By usingphotolithography, this current-blocking portion 14 is patterned so that420 μm-diameter circles are spaced at an interval of 1050 μm in a matrixform. It should be noted that, during this photolithographic process,the patterning is such that the center of the circular current-blockingportion 14 is aligned with the center of the partial electrode 6.Subsequently, by using sputtering, over the surfaces of the n-typecladding layer 2 and the current-blocking portion 14 of this wafer, acurrent-spreading layer 15 made of ITO is formed. Subsequently, usingdeposition and photolithography, a circular upper electrode 16 is formedso that its center is aligned with the center of the circularcurrent-blocking portion 14.

In this case, although heat treatment is performed in the above bondingand upper electrode 16 formation, this heat treatment causes metal todiffuse from the junction layer 9, and if the metal diffuses into thelight-reflecting layer 7, an alloying reaction is caused to reduce lightreflectance. To inhibit this alloying reaction, the diffusion-inhibitinglayer 8 and the diffusion-inhibiting layer 12 are provided.

The wafer made as above is set in a dicer to dice it into a 1 mm squarechip, and etch and remove from the cross section thereof broken layersand contamination to make a light-emitting diode. Subsequently, thelight-emitting diode device is eutectically die-bonded via a packagingalloy 17 to an excellent dissipative packaging system 18, andwire-bonded to a packaging system (not shown) separated from thepackaging system 18, to make a sample for property evaluation.

FIG. 3 shows current flow through the light-emitting diode fabricatedabove. The current-blocking portion 14 causes electrons 19 injected fromthe upper electrode 16 to flow to the periphery of the device. On theother hand, the current-blocking portion 5 causes holes 20 injected fromthe lower electrode 13 to be injected into the partial electrode 6formed in the middle portion. The sheet resistance of the n-typecladding layer 2 is made higher than the sheet resistance of the p-typecladding layer 4, so as to choose the shortest current path in then-type cladding layer 2 and cause current to flow to the periphery ofthe active layer 3, to thereby emit light in a light-emitting portion21. For this reason, no interruption is caused by the upper electrode16, thus the emitted light to be taken out efficiently. Conversely, incase the sheet resistance of the n-type cladding layer 2 is made lowerthan the sheet resistance of the p-type cladding layer 4, current whichflows directly below the upper electrode 16 is increased, which resultsin an increase of the ratio of emitting light there, and a decrease oflight-emitting efficiency due to interruption caused by the upperelectrode 16. Also, the partial electrode 6 is ohmically bonded toconduct current. If neither the partial electrode 6 nor thecurrent-blocking portion 5 is provided, a potential barrier is causedbetween the p-type cladding layer 4 and the light-reflecting layer 7,which results in no electrical conduction.

Current is conducted through the above sample for property evaluation tomeasure light emission output. The light emission wavelength is 630 nmred. As a result, the current and light emission output exhibitsubstantially linearity until when the current becomes 500 mA. This isbecause use of high thermal-conductivity material for the substrateallows heat caused in the light-emitting diode device to be efficientlydissipated to the packaging system 18, so that the temperature in thelight-emitting diode device does not become high even in the event oflarge electrical conduction, and the decrease of photoelectricconversion efficiency in the active layer 3 is inhibited. Also, thelight emission output at the conducting current of 350 mA, for example,is 410 mW, which corresponds to approximately 60% as external quantumefficiency. This allows the current-blocking portion 14 to suppresslight emission directly below the upper electrode 16, and of lightefficiently converted from electricity in a light-emitting portion 21,light radiated to the backside of the light-emitting diode device isefficiently reflected by the light-reflecting layer 7 using a highreflectance Ag alloy, which can result in high external quantumefficiency. Also, because the partial electrode 6 and thelight-reflecting layer 7 are independent of each other, it is notnecessary to balance the tradeoff between light reflectance andelectrical conductance as in the prior art, in other words, no decreaseof light reflectance is caused even when conducting current isincreased, thus making it possible to provide a high efficiencylight-emitting diode in large electrical conduction.

Second Embodiment

FIG. 4 shows a cross-sectional structure of a flip chip typelight-emitting diode according to a second embodiment of the presentinvention.

Under a light-permeable substrate 22 made of transparent material tolight, a light-emitting layer comprising a p-type cladding layer 23, anactive layer 24, and an n-type cladding layer 25 is placed. Similarly tothe first embodiment, the sheet resistance of the n-type cladding layer25 is made higher than the sheet resistance of the p-type cladding layer23. As material of the light-permeable substrate 22, besides glass,sapphire or SiC, GaP may be used in the case of red or yellowlight-emitting diodes. And, the active layer 24 and the n-type claddinglayer 25 are partially removed, to partially expose the p-type claddinglayer 23. On this exposed portion of the p-type cladding layer 23, anelectrode 33 for the p-type cladding layer is formed. Also, in a portionof the n-type cladding layer 25, a current-blocking portion 26 isprovided. A current-spreading layer 27 made of a transparent conductiveITO film is formed to cover both the current-blocking portion 26 and then-type cladding layer 25. In a lower portion of the current-spreadinglayer 27 and directly below the current-blocking portion 26, anelectrode 28 for the current-spreading layer is formed which issmaller-sized than the current-blocking portion 26. Below thecurrent-spreading layer 27 and in a portion excluding directly below thecurrent-blocking portion 26, a light-reflecting layer 30 made of ahigh-reflectance Ag alloy (marketed as APC, FURUYA METAL Co., Ltd.) isformed. Here, to make light reflectance higher, it would be better thatan insulating layer 29 is formed between the n-type cladding layer 25and the light-reflecting layer 30, so as not to cause a reaction betweenthe n-type cladding layer 25 and the light-reflecting layer 30 during aheating process, which decreases the light reflectance.

Also, bonding to a packaging system 39 is performed via aheat-dissipating bonding solder 35 to efficiently dissipate heat of thelight-emitting layer in a lower portion of the light-reflecting layer30, to handle large electrical conduction. In this case, on thelight-emitting diode device side, a heat-dissipating bonding layer 32for good soldering of the heat-dissipating bonding solder 35 is formed.Further, between this heat-dissipating bonding layer 32 and thelight-reflecting layer 30, a diffusion-inhibiting layer 31 is formed, soas not to cause an alloying reaction between them at high temperaturesduring the wafer process or packaging process, which reduces reflectanceof the light-reflecting layer 30. The electrode 28 for thecurrent-spreading layer is bonded via a conducting bonding solder 36 anda stem wiring pattern 37 to a packaging system 39. The electrode 33 forthe p-type cladding layer is bonded via a conducting bonding solder 34and a stem wiring pattern 38 to the packaging system 39. Protectivefilms 40 and 41 are respectively formed on sides of the light-emittinglayer so as not to bring solder into contact with the light-emittinglayer during this packaging, and form a leak path. By the abovepackaging, high thermal dissipation can be achieved.

In the light-emitting diode of the second embodiment of the presentinvention, the current-blocking portion 26 is formed directly above theelectrode 28 for the current-spreading layer so that the light-emittinglayer is positioned in the upper portion of the light-reflecting layer30, and the sheet resistance of the n-type cladding layer 25 is madehigher than the sheet resistance of the p-type cladding layer 23.Further, because the light-reflecting layer 30 is formed for only thepurpose of making light reflectance high, it is possible to provide thelight-emitting diode with very high light reflectance even in the caseof large electrical conduction, and which has high light-extractingefficiency. In contrast, in the conventional flip-chip light-emittingdiode shown in FIG. 9, because the electrode 110 for the n-type claddinglayer formed in the lower portion of the n-type cladding layer 104 hasto work both as the electrode to flow the current, and as thelight-reflecting layer for reflecting light, achieving high lightreflectance is difficult, and light-extracting efficiency decreases.

Third Embodiment

Although in the first embodiment of the present invention, thecurrent-spreading layer 15 is provided between the n-type cladding layer2 and the circular upper electrode 16, a branching electrode 42 may,without the current-spreading layer, be ohmically bonded directly on thecurrent-blocking portion 14 and to a portion of the surface of then-type cladding layer 2, as shown in FIG. 5. In the structure of FIG. 5,because current injected is spread by the branching electrode 42, it isnot necessary to form a current-spreading layer, and manufacturing costcan be lower than that of the first embodiment. FIGS. 6A-6D show thelight-emitting diode of FIG. 5 viewed from the branching electrode 42side. The above branching electrode 42 may be in any form of FIGS.6A-6D, and be in any form other than this form, which can effectivelyspread current.

Fourth Embodiment

Further, FIG. 7 shows that in the structure of FIG. 5, acurrent-spreading layer 43 is provided on the n-type cladding layer 2 soas to expose a portion of the surface of the branching electrode 42.This structure allows light diffusely reflected in the light-emittinglayer, which cannot be extracted in FIG. 5, to be extracted efficientlyto outside from portion of the current-spreading layer 43. In this case,a transparent conductive film of ITO or the like is used as material ofthe current-spreading layer 43.

Fifth Embodiment

Although in the first embodiment of the present invention, only thecircular upper electrode 16 is provided on the surface of thecurrent-spreading layer 15, the branching electrode 42 used in FIG. 5may, in addition to this upper electrode 16, be ohmically bondeddirectly on the current-blocking portion 14 and a portion of the surfaceof the n-type cladding layer 2, as shown in FIG. 8, to thereby allowcurrent injected from the upper electrode 16 to be spread effectively.

In each embodiment of the present invention, the active layer may havemulti-quantum-well structure, in which are alternately stacked barrierlayers, which comprise large band gap thin film semiconductor layers,and well layers, which comprise small band gap thin film semiconductorlayers, and whereby it is also possible to have similar effects.

Although in each embodiment of the present invention, the sheetresistance of the n-type cladding layer is made higher than the sheetresistance of the p-type cladding layer, effects similar to those of theembodiments of the present invention can also be obtained by amultilayered p-type cladding layer comprising combined low sheetresistance semiconductor layers whose overall sheet resistance is lowerthan the sheet resistance of the n-type cladding layer.

Although in each embodiment of the present invention, the transparentconductive film of ITO is used as the current-spreading layer, effectssimilar to those of the embodiments of the present invention can also beobtained by use of a transparent conductive film other than ITO.

Although the first embodiment of the present invention uses the circularupper electrode 16, effects similar to those of the first embodiment ofthe present invention can also be obtained by using a branchingelectrode as this upper electrode 16.

Although the invention has been described with respect to the specificembodiments for complete and clear disclosure, the appended claims arenot to be thus limited but are to be construed as embodying allmodifications and alternative constructions that may occur to oneskilled in the art which fairly fall within the basic teaching hereinset forth.

1. A light-emitting diode, comprising: a substrate including alight-extracting portion on a front side of the substrate; alight-emitting part formed on a back side of the substrate, thelight-emitting part comprising at least a first conductivity typecladding layer, an active layer, and a second conductivity type claddinglayer stacked sequentially; a current-blocking portion formed in a sideportion on a back side of the second conductivity type cladding layer; acurrent-spreading layer formed on a back side of the current-blockingportion and the second conductivity type cladding layer; acurrent-injecting electrode formed on the back side of thecurrent-spreading layer so as to face the current-blocking portion; anda light-reflecting layer formed on the back side of thecurrent-spreading layer excluding a portion of the current-spreadinglayer in which the current-injecting electrode is formed.
 2. Thelight-emitting diode according to claim 1, wherein a sheet resistance ofthe second conductivity type cladding layer is higher than a sheetresistance of the first conductivity type cladding layer.
 3. Thelight-emitting diode according to claim 1, wherein the light-reflectinglayer comprises a layer including an alloy comprising of a memberselected from a group consisting of Ag, Au, Al, and combinationsthereof, or a composite layer of at least one of Ag, Au, or Al.
 4. Thelight-emitting diode according to claim 1, wherein the active layercomprises a multi-quantum-well structure.
 5. The light-emitting diodeaccording to claim 1 wherein the current-spreading layer comprises atransparent conductive film.
 6. The light-emitting diode according toclaim 1, further comprising an insulating layer formed between the lightreflecting layer and the second electrical conductive cladding layer.